參數(shù)資料
型號: 2SK3462(2-7B1B)
元件分類: JFETs
英文描述: 3 A, 250 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-7B1B, SC-64, 3 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 217K
代理商: 2SK3462(2-7B1B)
2SK3462
2004-07-06
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
A
Drain cut-off current
IDSS
VDS = 250 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
250
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.5
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 1.5 A
1.2
1.7
Forward transfer admittance
Yfs
VDS = 10 V, ID = 1.5 A
0.5
2.2
S
Input capacitance
Ciss
267
Reverse transfer capacitance
Crss
32
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
98
pF
Rise time
tr
5
Turn-on time
ton
20
Fall time
tf
5
Switching time
Turn-off time
toff
30
ns
Total gate charge
Qg
12
Gate-source charge
Qgs
6
Gate-drain charge
Qgd
VDD 200 V, VGS = 10 V, ID = 3 A
6
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
3
A
Pulse drain reverse current
(Note 1)
IDRP
6
A
Forward voltage (diode)
VDSF
IDR = 3 A, VGS = 0 V
2.0
V
Reverse recovery time
trr
125
ns
Reverse recovery charge
Qrr
IDR = 3 A, VGS = 0 V,
dIDR/dt = 100 A/s
470
nC
Marking
RL = 67
0 V
10 V
VGS
VDD 100 V
ID = 1.5 A VOUT
4.7
Duty <= 1%, tw = 10 s
K3462
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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