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參數(shù)資料
| 型號： | 2SK3458-AZ |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-25, 3 PIN |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 212K |
| 代理商： | 2SK3458-AZ |
Data Sheet D14755EJ1V0DS
7
2SK3458
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
4
3) TO-263 (MP-25ZK)
10.0±0.2
8.0
TYP.
2.54
0.7±0.15
9.15±0.2
2.45±0.25
15.25±0.5
1.35±0.3
123
4
2.5
4.45±0.2
1.3±0.2
0.5±0.2
0 to 8o
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.4
No plating
8.4 TYP.
0.025 to
0.25
EQUIVALENT CIRCUIT
Source (S)
Body
Diode
Gate (G)
Drain (D)
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3458-S | 6 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3461L-E | 85 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3462(2-7J1B) | 3 A, 250 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3462(2-7B1B) | 3 A, 250 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3467 | 80 A, 20 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3458-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3458-ZK | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK346 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-220AB |
| 2SK3460 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MOSFET |
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