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參數資料
| 型號： | 2SK3448 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Ultrahigh-Speed Switching Use |
| 中文描述： | 超高速開關的使用 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 27K |
| 代理商： | 2SK3448 |
2SK3448
No.6785-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Meets radial taping.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6785
2SK3448
Package Dimensions
unit : mm
2087A
[2SK3448]
N1500 TS IM TA-2921
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Use
1 : Source
2 : Drain
3 : Gate
SANYO : NMP
6.9
0.6
0.5
4
1
1
0.9
2.5
1.45
1.0
0.45
4
1
2.54
2.54
1
2
3
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
60
±
20
2.5
10
PW
≤
10
μ
s, duty cycle
≤
1%
1
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=
±
16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=1.0A, VGS=4V
60
V
μ
A
μ
A
V
S
m
m
10
±
10
2.4
1.0
2.7
3.8
115
150
Static Drain-to-Source On-State Resistance
150
210
Continued on next page.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3449 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH60V4.8ATO-126 |
| 2SK345 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 5A I(D) | TO-220AB |
| 2SK3450-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:STD MOSFET |
| 2SK3450-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3451-01 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof |
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