參數(shù)資料
型號(hào): 2SK3445
元件分類: JFETs
英文描述: 20 A, 250 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-9F1B, SC-97, 4 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 183K
代理商: 2SK3445
2SK3445
2009-09-29
2
Marking
Electrical Characteristics (Note 5) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Drain cut-off current
IDSS
VDS = 250 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
250
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
3.0
5.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 10 A
90
105
m
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 10 A
5
10
S
Input capacitance
Ciss
2090
Reverse transfer capacitance
Crss
280
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1000
pF
Rise time
tr
20
Turn-on time
ton
40
Fall time
tf
10
Switching time
Turn-off time
toff
Duty <= 1%, tw = 10 μs
40
ns
Total gate charge
(gate-source plus gate-drain)
Qg
45
Gate-source charge
Qgs
22
Gate-drain (“miller”) charge
Qgd
VDD 200 V, VGS = 10 V,
ID = 20 A
23
nC
Note 5: Connect the S1 pin and S2 pin together, then ground them except during switching time measurement.
Source-Drain Ratings and Characteristics (Note 6) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1, Note 6)
IDR1
20
A
Pulse drain reverse current
(Note 1, Note 6)
IDRP1
80
A
Continuous drain reverse current
(Note 1, Note 6)
IDR2
1
A
Pulse drain reverse current
(Note 1, Note 6)
IDRP2
4
A
Forward voltage (diode)
VDS2F
IDR1 = 20 A, VGS = 0 V
1.5
V
Reverse recovery time
trr
320
ns
Reverse recovery charge
Qrr
IDR = 20 A, VGS = 0 V,
dIDR/dt = 100 A/μs
2.8
μC
Note 6: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open.
IDR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open.
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
K3445
Lot No.
Note 4
Part No.
(or abbreviation code)
R
L
=12.5
Ω
VDD 125 V
0 V
VGS
10 V
4.7
Ω
ID = 10 A
VOUT
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
相關(guān)PDF資料
PDF描述
2SK3447TZ-E 1000 mA, 150 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2SK3451-01MR 13 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3455-AZ 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3455 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3455-AZ 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3445(TE24L,Q) 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 250V 20A 4PIN TFP - Rail/Tube
2SK3445_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator, DC-DC Converter Applications
2SK3445_09 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator, DC-DC Converter Applications
2SK3446 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching
2SK3446_05 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching