參數(shù)資料
型號: 2SK3437(2-10S1B)
元件分類: JFETs
英文描述: 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-10S1B, 3 PIN
文件頁數(shù): 4/6頁
文件大小: 209K
代理商: 2SK3437(2-10S1B)
2SK3437
2010-01-29
4
Drain
Power
dissip
ation
P
D
(W)
Gate
th
reshold
volt
age
V
th
(V)
Case temperature Tc (°C)
RDS (ON) – Tc
Drain-source
on
-r
esist
ance
R
DS
(
O
N
)
(
Ω
)
Drain-source voltage VDS (V)
IDR – VDS
Drain
reverse
cur
rent
I DR
(A)
Drain-source Voltage VDS (V)
Capacitance – VDS
Cap
acit
ance
C
(pF)
Case temperature Tc (°C)
Vth – Tc
Case temperature Tc (°C)
PD – Tc
Gate-sou
rce
volt
age
V
GS
(
V
)
Total gate charge Qg (nC)
Dynamic input/output characteristics
Drain-source
V
olt
age
V
DS
(V)
0
20
60
40
100
80
200
0
40
80
120
160
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1
10
100
Common source
Tc
= 25°C
Pulse test
VGS = 0, 1 V
1
3
5
10
0
80
40
0
40
80
120
160
1
2
3
4
5
6
Common source
VDS = 10 V
ID = 1 mA
Pulse test
20
16
12
8
4
0
1
0.1
1
10
100
1000
10
100
1000
10000
Ciss
Coss
Crss
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
0
10
20
30
40
100
200
300
400
500
VDD = 100 V
VDS
VGS
400
200
Common source
ID = 10 A
Tc
= 25°C
Pulse test
0
80
40
0
40
80
120
160
0.5
1.0
1.5
2.0
2.5
Common source
VGS = 10 V
Pulse test
ID = 10 A
5
2.5
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