參數(shù)資料
型號(hào): 2SK3435-S
廠商: NEC Corp.
元件分類(lèi): MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 48K
代理商: 2SK3435-S
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confirm that this is the latest version.
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availability and additional information.
1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3435
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PRELIMINARY DATA SHEET
Document No.
Date Published
Printed in Japan
D14604EJ1V0DS00 (1st edition)
March 2000 NS CP(K)
DESCRIPTION
The 2SK3435 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
R
DS(on)1
= 14
m
MAX. (V
GS
= 10
V, I
D
= 40
A)
R
DS(on)2
= 22
m
MAX. (V
GS
= 4.0
V, I
D
= 40 A)
Low C
iss
: C
iss
= 3200
pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS
±
20
V
Drain Current (DC)
Drain Current (pulse)
Note1
I
D(DC)
±
80
A
I
D(pulse)
±
320
A
Total Power Dissipation (T
C
= 25°C)
P
T
84
W
Total Power Dissipation (T
A
= 25°C)
P
T
1.5
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to +150
°C
Single Avalanche Current
Note2
I
AS
31
A
Single Avalanche Energy
Note2
E
AS
96
mJ
Notes 1.
PW
10
μ
s, Duty cycle
1 %
2.
Starting T
ch
= 25 °C, R
G
= 25
,
V
GS
= 20 V
0 V
THERMAL RESISTANCE
Channel to Case
R
th(ch-C)
1.49
°
C/W
Channel to Ambient
R
th(ch-A)
83.3
°
C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3435
TO-220AB
2SK3435-S
TO-262
2SK3435-Z
TO-220SMD
(TO-220AB)
(TO-262)
(TO-220SMD)
#
#
#
The mark
#
shows major revised points.
#
#
#
相關(guān)PDF資料
PDF描述
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