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| 型號(hào)： | 2SK3433-S-AZ |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 60 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | MP-25 FIN CUT, 3 PIN |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大小： | 208K |
| 代理商： | 2SK3433-S-AZ |
Data Sheet D14602EJ4V0DS
2
2SK3433
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 20 A
11
22
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 20 A
22
26
m
RDS(on)2
VGS = 4.0 V, ID = 20 A
29
41
m
Input Capacitance
Ciss
VDS = 10 V
1500
pF
Output Capacitance
Coss
VGS = 0 V
250
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
120
pF
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 20 A
35
ns
Rise Time
tr
VGS = 10 V
320
ns
Turn-off Delay Time
td(off)
RG = 10
89
ns
Fall Time
tf
120
ns
Total Gate Charge
QG
VDD = 48 V
30
nC
Gate to Source Charge
QGS
VGS = 10 V
5
nC
Gate to Drain Charge
QGD
ID = 40 A
8
nC
Body Diode Forward Voltage
VF(S-D)
IF = 40 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 40 A, VGS = 0 V
44
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s60
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS
10%
0
ID
90%
td(on)
tr td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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