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參數(shù)資料
| 型號： | 2SK3389 |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-9F1B, SC-97, 4 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 201K |
| 代理商： | 2SK3389 |
2SK3389
2004-07-06
2
Electrical Characteristics (Note 4) (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
A
Drain cut-off current
IDSS
VDS = 30 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 38 A
3.8
5.0
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 38 A
35
70
S
Input capacitance
Ciss
3530
Reverse transfer capacitance
Crss
570
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1870
pF
Rise time
tr
10
Turn-on time
ton
25
Fall time
tf
20
Switching time
Turn-off time
toff
Duty <= 1%, tw = 10 s
65
ns
Total gate charge
(gate-source plus gate-drain)
Qg
62
Gate-source charge
Qgs
43
Gate-drain (“miller”) charge
Qgd
VDD 24 V, VGS = 10 V, ID = 75 A
19
nC
Note 4: Connect the S1 and S2 pins, and ground them except during switching time measurement.
Source-Drain Ratings and Characteristics (Note 5) (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1, Note 5)
IDR1
75
A
Pulse drain reverse current
(Note 1, Note 5)
IDRP1
300
A
Continuous drain reverse current
(Note 1, Note 5)
IDR2
1
A
Pulse drain reverse current
(Note 1, Note 5)
IDRP2
4
A
Forward voltage (diode)
VDS2F
IDR1 = 75 A, VGS = 0 V
1.5
V
Reverse recovery time
trr
120
ns
Reverse recovery charge
Qrr
IDR = 75 A, VGS = 0 V,
dIDR/dt = 50 A/s
180
nC
Note 5: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open.
IDR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open.
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
R
L
=0.
39
VDD 15 V
0 V
VGS
10 V
4.
7
ID = 38 A
VOUT
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3389(TE24L,Q) | 功能描述:MOSFET N-ch 30V 75A 0.004 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3389_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 2SK3390 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET UHF Power Amplifier |
| 2SK3391 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK3391_07 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
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