參數(shù)資料
型號(hào): 2SK3388
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
中文描述: 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型
文件頁數(shù): 3/6頁
文件大小: 225K
代理商: 2SK3388
2SK3388
2002-02-06
3
F
f
D
D
Drain-source voltage V
DS
(V)
I
D
– V
DS
D
D
Drain-source voltage V
DS
(V)
I
D
– V
DS
D
D
Gate-source voltage V
GS
(V)
I
D
– V
GS
D
D
Gate-source voltage V
GS
(V)
V
DS
– V
GS
Drain current I
D
(A)
Y
fs
– I
D
Drain current I
D
(A)
R
DS (ON)
– I
D
D
R
D
16
0
0
4
8
12
20
1
2
4
3
5
VGS 3.5 V
4.5
10
4
3.8
Common source
Tc 25°C
Pulse test
4.2
6
80
0
0
20
40
60
100
4
8
16
12
20
Common source
Tc 25°C
Pulse test
8
10
6
5
5.5
VGS 4 V
4.5
40
0
0
10
20
30
50
2
4
8
6
10
Tc 55°C
Common source
VDS 10 V
Pulse test
100
25
0
0
5
10
15
20
1
2
3
4
Common source
Tc 25°C
Pulse test
ID 20 A
10
5
1
1
10
100
10
100
Tc 55°C
25
Common source
VDS 10 V
Pulse test
100
10
1
10
100
100
1000
Common source
Tc 25°C
Pulse test
VGS 10, 15 V
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參數(shù)描述
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2SK3389(TE24L,Q) 功能描述:MOSFET N-ch 30V 75A 0.004 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube