參數(shù)資料
型號: 2SK3387
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV)
中文描述: 東芝場效應(yīng)晶體管硅?頻道馬鞍山型(二級-π- MOSV)
文件頁數(shù): 4/6頁
文件大?。?/td> 216K
代理商: 2SK3387
2SK3387
2002-07-22
4
0
4
8
12
16
0
0
40
80
120
160
20
40
60
VDD 120 V
VDS
VGS
30
60
Common source
ID 18 A
Tc 25°C
Pulse test
D
D
G
t
Case temperature Tc (°C)
R
DS (ON)
– Tc
D
R
D
Drain-source voltage V
DS
(V)
I
DR
– V
DS
D
D
Drain-source voltage V
DS
(V)
Capacitance – V
DS
C
Case temperature Tc (°C)
V
th
– Tc
Case temperature Tc (°C)
P
D
– Tc
G
G
Total gate charge Q
g
(nC)
Dynamic input/output characteristics
D
D
40
0
40
80
120
160
80
200
Common source
Pulse test
160
120
80
40
0
ID 18 A
4.5
9
VGS 10 V
150
100
0
0
40
80
120
160
50
1
3
5
10
30
50
100
0
Common source
Tc 25°C
Pulse test
0.4
0.8
1.2
1.6
VGS 0, 1 V
10
5
3
1
10
0.1
30
50
100
300
500
1000
3000
5000
0.3 0.5
1
3
5
10
30 50
100
Common source
VGS 0 V
f 1 MHz
Tc 25°C
Pulse test
Ciss
Coss
Crss
0
1
2
3
4
80
40
0
40
80
120
160
Common source
VDS 10 V
ID 1 mA
Pulse test
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參數(shù)描述
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