參數(shù)資料
型號(hào): 2SK3386-Z
元件分類: 小信號(hào)晶體管
英文描述: 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
封裝: TO-252, MP-3Z, 3 PIN
文件頁(yè)數(shù): 10/10頁(yè)
文件大?。?/td> 235K
代理商: 2SK3386-Z
Data Sheet D14471EJ4V0DS
7
2SK3386
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2
13
6.5±0.2
5.0±0.2
4
1.5-
0.1
+0.2
5.5±0.2
7.0
MIN.
13.7
MIN.
2.3
0.75
0.5±0.1
2.3±0.2
1.6±0.2
1.1±0.2
0.5-0.1
+0.2
0.5-0.1
+0.2
2) TO-252 (MP-3Z)
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
<R>
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