參數(shù)資料
型號(hào): 2SK3373
元件分類: JFETs
英文描述: 2 A, 500 V, 3.2 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-7J1B, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 186K
代理商: 2SK3373
2SK3373
2005-03-04
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
2SK3373
Switching Regulator and DC/DC Converter Applications
Motor Drive Applications
Low drain-source ON-resistance: RDS (ON) = 2.9 m (typ.)
High forward transfer admittance: |Yfs| = 1.7 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 500 V)
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Drain-gate voltage (RGS = 20 k)
VDGR
500
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
2
Pulse (t
= 1 ms)
(Note 1)
IDP
5
Drain current
Pulse (t
= 100 s)
(Note 1)
IDP
12
A
Drain power dissipation (Tc
= 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
112
mJ
Avalanche current
IAR
2
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 48.4 mH, RG = 25 , IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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