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參數(shù)資料
| 型號： | 2SK3367-Z-AZ |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 36000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 封裝： | TO-252, MP-3Z, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 129K |
| 代理商： | 2SK3367-Z-AZ |
Data Sheet D14257EJ3V0DS
3
2SK3367
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
0
20
40
60
80
100 120 140 160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature - C
P
T
-
Total
Power
Dissipation
-
W
0
20
40
60
80
100 120 140 160
70
60
50
40
30
20
10
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
1
0.1
10
100
1000
1
10
100
TC = 25C
Single Pulse
ID(pulse) = 144 A
RDS(on)
Limited
(at
V
GS
= 10
V
)
PW
= 100
s
1 ms
0.1
Po
wer
Dissipation
Limited
10
ms
ID(DC) = 36 A
100
ms
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
2
1
0.5
1.5
Pulsed
VGS =10 V
4.5 V
4.0 V
40
80
120
160
200
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
0.01
1
0.1
10
1000
100
Pulsed
0
1
4
3
2
56
0.001
0.0001
VDS = 10 V
TA = 150C
125C
75C
25C
40C
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| 2SK3385-AZ | 30000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3386-AZ | 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3367-Z-E1-AZ | 制造商:Renesas Electronics 功能描述:Nch 30V 36A 9m@10V TO252 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 36A 3-Pin(2+Tab) TO-252 T/R |
| 2SK3371 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator Applications |
| 2SK3371(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) PW-Mold 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) PW-Mold Bulk |
| 2SK3371(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 1A PW-MOLD |
| 2SK3371_10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator Applications |
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