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參數(shù)資料
| 型號： | 2SK3353 |
| 元件分類： | JFETs |
| 英文描述： | 82 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-25, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 88K |
| 代理商： | 2SK3353 |
Data Sheet D14130EJ4V0DS
2
2SK3353
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V10
A
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 41 A30
50
S
RDS(on)1
VGS = 10 V, ID = 41 A7.5
9.5
m
Drain to Source On-state Resistance
RDS(on)2
VGS = 4V, ID = 41 A
10.5
14
m
Input Capacitance
Ciss
VDS = 10 V
4650
pF
Output Capacitance
Coss
VGS = 0 V
780
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
380
pF
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 41 A
100
ns
Rise Time
tr
VGS = 10 V
1550
ns
Turn-off Delay Time
td(off)
RG = 10
280
ns
Fall Time
tf
420
ns
Total Gate Charge
QG
VDD = 48 V90
nC
Gate to Source Charge
QGS
VGS = 10 V14
nC
Gate to Drain Charge
QGD
ID = 82 A24
nC
Body Diode Forward Voltage
VF(S-D)
IF = 82 A, VGS = 0 V1.0
V
Reverse Recovery Time
trr
IF = 82 A, VGS = 0 V60
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
110
nC
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
ID
Wave Form
VGS
ID
10%
0
90%
VGS
ID
ton
toff
td(on)
tr
td(off)
tf
10%
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