- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄370114 > 2SK3349 (Hitachi,Ltd.) Silicon N Channel MOS FET High Speed Switching PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3349 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | 2SK3349 |
2SK3349
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note 2
20
V
Gate to source voltage
±
10
V
Drain current
50
mA
Drain peak current
Note1
200
mA
Body-drain diode reverse drain current
50
mA
Channel dissipation
100
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value on the alumina ceramic board (12.5x20x0.7 mm)
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
20
—
—
V
I
D
= 100
μ
A, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
10
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
—
—
±
5
μ
A
μ
A
V
GS
=
±
8 V, V
DS
= 0
V
DS
= 20 V, V
GS
= 0
Zero gate voltege drain
current
—
—
1
Gate to source cutoff voltage
V
GS(off)
0.8
—
1.8
V
I
D
= 10
μ
A, V
DS
= 5 V
Static drain to source on state R
DS(on)
resistance
—
2.8
3.6
I
D
= 25 mA,V
GS
= 4 V
Note 3
R
DS(on)
|y
fs
|
Ciss
—
4.8
7.2
I
D
= 10 mA,V
GS
= 2.5 V
Note 3
Forward transfer admittance
56
85
—
mS
I
D
= 25 mA, V
DS
= 10 V
Note 3
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Input capacitance
—
6
—
pF
Output capacitance
Coss
—
7
—
pF
Reverse transfer capacitance Crss
—
1.2
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
—
120
—
ns
I
D
= 25 mA, V
GS
= 4 V
R
L
= 400
Rise time
—
450
—
ns
Turn-off delay time
—
480
—
ns
Fall time
Note:
—
500
—
ns
3. Pulse test
4. Marking is DN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3351 | N CHANNEL MOS SILICON TRANSISTOR |
| 2SK3359 | Switching N-channel power MOS FET industrial use |
| 2SK3359-S | Switching N-channel power MOS FET industrial use |
| 2SK3359-Z | Switching N-channel power MOS FET industrial use |
| 2SK3360 | Switching N-channel power MOS FET industrial use |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK334A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 300UA I(DSS) |
| 2SK334B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 800UA I(DSS) |
| 2SK334C | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 1.5MA I(DSS) |
| 2SK334N11 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 60UA I(DSS) |
| 2SK334N12 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 150UA I(DSS) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。