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參數(shù)資料
| 型號： | 2SK3335(TP) |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TP, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2SK3335(TP) |
2SK3335
No.7216-2/4
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
8A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
32
A
Allowable Power Dissipation
PD
1W
Tc=25C
15
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0
10
A
Gate-to-Source Leakage Current
IGSS
VGS= ±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.0
2.4
V
Forward Transfer Admittance
yfs
VDS=10V, ID=4A
3.8
5.5
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=4A, VGS=10V
115
150
m
RDS(on)
ID=4A, VGS=4V
150
210
m
Input Capacitance
Ciss
VDS=20V, f=1MHz
220
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
75
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
25
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
6
ns
Rise Time
tr
See specified Test Circuit.
15
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
25
ns
Fall Time
tf
See specified Test Circuit.
15
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=8A
8
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=8A
1.5
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=8A
2
nC
Diode Forward Voltage
VSD
IS=8A, VGS=0
0.95
1.2
V
Switching Time Test Circuit
PW=10
s
D.C.
≤1%
P.G
50
G
S
D
ID=4A
RL=7.5
VDD=30V
VOUT
2SK3335
VIN
10V
0V
VIN
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| 2SK3335TP-FA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-252VAR |
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