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參數(shù)資料
| 型號： | 2SK3326 |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 198K |
| 代理商： | 2SK3326 |
Data Sheet D14204EJ1V0DS00
7
2SK3326
PACKAGE DRAWING (Unit: mm)
Isolated TO-220(MP-45F)
Remark
Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
1. Gate
2. Drain
3. Source
10.0±0.3
3.2±0.2
2.7±0.2
1.3±0.2
0.7±0.1
2.54
1.5±0.2
12 3
4±0.2
13.5
MIN.
12.0±0.2
15.0±0.3
3±0.1
4.5±0.2
2.5±0.1
0.65±0.1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3326-AZ | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3335(TP) | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3335(TP-FA) | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3335TP | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3342(2-7B2B) | 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3326-AZ | 制造商:Renesas Electronics 功能描述:Nch 500V 10A 850m@10V IsolatedTO220 制造商:Renesas Electronics 功能描述:Nch 500V 10A 850m@10V IsolatedTO220 Bulk |
| 2SK332D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 1.2MA I(DSS) | DIP |
| 2SK332E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 2.5MA I(DSS) | DIP |
| 2SK332F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 5MA I(DSS) | DIP |
| 2SK333 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | DUAL | 80V V(BR)DSS | 1.2MA I(DSS) | DIP |
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