參數(shù)資料
型號(hào): 2SK3325-S
元件分類(lèi): JFETs
英文描述: 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝: FIN CUT, MP-25, TO-262, 3 PIN
文件頁(yè)數(shù): 7/8頁(yè)
文件大小: 77K
代理商: 2SK3325-S
Data Sheet D14264EJ1V0DS00
7
2SK3325
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
2)TO-262 (MP-25 Fin Cut)
3)TO-263 (MP-25ZJ)
EQUIVALENT CIRCUIT
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
(10)
4
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
(10)
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
5.7±0.4
4
2.8±0.2
4.8 MAX.
1.3±0.2
0.5±0.2
(0.5R)
(0.8R)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
Source
Body
Diode
Gate
Drain
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as
much as possible, and quickly dissipate it once, when it has occurred.
相關(guān)PDF資料
PDF描述
2SK3325-AZ 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3325-ZJ 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3326B-S17-AY 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3326 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3326-AZ 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3325-Z(AZ) 制造商:Renesas Electronics Corporation 功能描述:
2SK3325-Z-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 10A 3-Pin(2+Tab) TO-263 Cut Tape
2SK3325-ZJ 制造商:NEC 制造商全稱(chēng):NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3326 制造商:JVC Worldwide 功能描述:500V 10A 40W Nec Fet TO-220Ab N-Channel
2SK3326-AZ 制造商:Renesas Electronics 功能描述:Nch 500V 10A 850m@10V IsolatedTO220 制造商:Renesas Electronics 功能描述:Nch 500V 10A 850m@10V IsolatedTO220 Bulk