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參數(shù)資料
| 型號(hào)： | 2SK3322-ZK-AZ |
| 元件分類： | JFETs |
| 英文描述： | 5.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | MP-25ZK, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 91K |
| 代理商： | 2SK3322-ZK-AZ |
Data Sheet D14114EJ2V0DS
4
2SK3322
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
150
R
DS
(on)
-Drain
to
Source
On-State
Resistance
-
2
0
100
50
Tch - Channel Temperature - C
3
1
VGS = 10 V
Pulsed
4
2.8 A
ID = 4.0 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD
-
Diode
Forward
Current
-
A
1.5
1
0.5
0
100
10
0
0.1
0.01
Pulsed
0 V
VGS = 10 V
100
10
1
0.1
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
1000
100
10
1
VGS = 0 V
f = 1 MHZ
VDS - Drain to Source Voltage - V
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS
0.1
1
10
ID - Drain Current - A
td(on)
,t
r,
td(off)
,t
f-
Switching
Time
-
ns
100
10
1
0.1
VDD = 150 V
VGS = 10 V
RG = 10
td(off)
td(on)
tf
tr
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
0.1
1
10
trr
-
Reverse
Recovery
Time
-
ns
0.01
ID - Drain Current - A
10000
1000
100
10
di/dt = 50 A/
S
VGS = 0 V
QG - Gate Charge - nC
V
DS
-Drain
to
Source
Voltage
-
V
0
8
412
16
600
400
200
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-Gate
to
Source
Voltage
-
V
16
14
12
10
8
6
4
2
0
ID = 4.0 A
VDD = 450 V
300 V
150 V
VDS
VGS
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PDF描述 |
|---|---|
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3324 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3324-A | 制造商:Renesas Electronics 功能描述:Nch 900V 6A 2800m@10V TO3P Bulk |
| 2SK3325 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3325(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3325-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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