- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371554 > 2SK3316 (Toshiba Corporation) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type PDF資料下載
參數(shù)資料
| 型號： | 2SK3316 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 261K |
| 代理商： | 2SK3316 |
2SK3316
2002-07-03
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
MOSV)
2SK3316
Switching Regulator Applications
Fast reverse recovery time
Built
in high
speed free
wheeling diode
Low drain
source ON resistance
High forward transfer admittance
Low leakage current
Enhancement
mode
Maximum Ratings
(Ta = 25°C)
: t
rr
= 60 ns (typ.)
: R
DS (ON)
=
1
.6
(typ.)
: |Y
fs
| = 3.8 S (typ.)
: I
DSS
=
1
00 μA (max) (V
DS
= 500 V)
: V
th
= 2.0~4.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Characteristics
Symbol
Rating
Unit
Drain
source voltage
V
DSS
500
V
Drain
gate voltage (R
GS
= 20 k
)
V
DGR
500
V
Gate
source voltage
V
GSS
±30
V
DC
(Note 1)
I
D
5
A
Drain current
Pulse (Note 1)
I
DP
20
A
Drain power dissipation (Tc = 25°C)
P
D
35
W
Single pulse avalanche energy
(Note 2)
E
AS
180
mJ
Avalanche current
I
AR
5
A
Repetitive avalanche energy (Note 3)
E
AR
3.5
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch
c)
3.57
°C / W
Thermal resistance, channel to
ambient
R
th
(ch
a)
62.5
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD =
90 V, T
ch
= 25°C (initial), L = 12.2 mH, R
G
= 25
, I
AR
= 5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
—
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3320 | N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS) |
| 2SK3321 | N CHANNEL JUNCTION TYPE (GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS) |
| 2SK3337-01 | N-CHANNEL SILICON POWER MOS-FET |
| 2SK3338-01 | TRANS PREBIASED PNP 200MW SOT323 |
| 2SK3339-01 | N-CHANNEL SILICON POWER MOS-FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3316(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220NIS |
| 2SK3316_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3316QT | 制造商:Toshiba America Electronic Components 功能描述:SILICON N CHANNEL MOSFET |
| 2SK3318 | 功能描述:MOSFET N-CH 600V 15A TOP-3F RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK331A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 300UA I(DSS) | SO |
發(fā)布緊急采購，3分鐘左右您將得到回復。