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參數(shù)資料
| 型號： | 2SK3306 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 69K |
| 代理商： | 2SK3306 |
Data Sheet D14004EJ2V0DS00
2
2SK3306
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain Leakage Current
IDSS
100
AVDS = 500 V, VGS = 0 V
Gate to Source Leakage Current
IGSS
±100
nA
VGS =
±30 V, VDS = 0 V
Gate to Source Cut-off Voltage
VGS(off)
2.5
3.5
V
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs |
1.0
3.0
S
VDS = 10 V, ID = 2.5 A
Drain to Source On-state Resistance
RDS(on)
1.35
1.5
VGS = 10 V, ID = 2.5 A
Input Capacitance
Ciss
700
pF
VDS = 10 V, VGS = 0 V, f = 1 MHz
Output Capacitance
Coss
115
pF
Reverse Transfer Capacitance
Crss
6pF
Turn-on Delay Time
td(on)
16
ns
VDD = 150 V, ID = 2.5 A, VGS(on) = 10 V,
Rise Time
tr
3ns
RG = 10
, RL = 60
Turn-off Delay Time
td(off)
33
ns
Fall Time
tf
5.5
ns
Total Gate Charge
QG
13
nC
VDD = 400 V, VGS(on) = 10 V, ID = 5.0 A
Gate to Source Charge
QGS
4nC
Gate to Drain Charge
QGD
4.5
nC
Body Diode Forward Voltage
VF(S-D)
1.0
V
IF = 5.0 A, VGS = 0 V
Reverse Recovery Time
trr
0.7
sIF = 5.0 A, VGS = 0 V, di/dt = 50 A/s
Reverse Recovery Charge
Qrr
3.3
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
10 %
90 %
VGS(on)
10 %
0
ID
90 %
td(on)
tr td(off)
tf
10 %
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3306-AZ | 制造商:Renesas Electronics 功能描述:Nch 500V 5A 1500m@10V IsolatedTO220 Bulk |
| 2SK3307 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3307-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,70A,7,5m ohm,TO-3P 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-3P |
| 2SK3309 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3309(Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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