參數(shù)資料
型號: 2SK3304
元件分類: JFETs
英文描述: 7 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MP-88, TO-3P, 3 PIN
文件頁數(shù): 2/8頁
文件大小: 68K
代理商: 2SK3304
Data Sheet D13992EJ1V0DS00
2
2SK3304
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
IDSS
VDS = 900 V, VGS = 0 V
100
A
Gate to Source Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
±100
nA
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1.0 mA
2.5
3.5
V
Forward Transfer Admittance
| yfs |VDS = 20 V, ID = 4.0 A
2.5
4.7
S
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 4.0 A
1.6
2.0
Input Capacitance
Ciss
1300
pF
Output Capacitance
Coss
240
pF
Reverse Transfer Capacitance
Crss
VDS = 10 V
VGS = 0 V
f = 1 MHz
55
pF
Turn-on Delay Time
td(on)
20
ns
Rise Time
tr
44
ns
Turn-off Delay Time
td(off)
73
ns
Fall Time
tf
VDD = 150 V
ID = 4.0 A
VGS(on) = 10 V
RG = 10
, RL 36
45
ns
Total Gate Charge
QG
44
nC
Gate to Source Charge
QGS
6nC
Gate to Drain Charge
QGD
VDD = 450 V
VGS = 10 V
ID = 7.0 A
28
nC
Body Diode Forward Voltage
VF(S-D)
IF = 7.0 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
2.4
s
Reverse Recovery Charge
Qrr
IF = 7.0 A, VGS = 0 V
di/dt = 50 A/
s
13.5
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
10 %
90 %
VGS(on)
10 %
0
ID
90 %
td(on)
tr td(off)
tf
10 %
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3304-A 制造商:Renesas Electronics 功能描述:Nch 900V 7A 2000m@10V TO3P Bulk
2SK3305 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor
2SK3305-AZ 制造商:Renesas Electronics 功能描述:Nch 500V 5A 1500m@10V TO220AB Bulk
2SK3305-S 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3305-Z(AZ) 制造商:Renesas Electronics Corporation 功能描述: