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參數(shù)資料
| 型號(hào)： | 2SK3299-S |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 79K |
| 代理商： | 2SK3299-S |
Data Sheet D14060EJ1V0DS00
2
2SK3299
ELECTRICAL CHARACTERISTICS(T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
I
DSS
V
DS
= 600 V, V
GS
= 0 V
100
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
30 V, V
DS
= 0 V
±
100
nA
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 5.0 A
3.2
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 5.0 A
0.68
0.75
Input Capacitance
C
iss
V
DS
= 10 V
1580
pF
Output Capacitance
C
oss
V
GS
= 0 V
280
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
25
pF
Turn-on Delay Time
t
d(on)
V
DD
= 150 V, I
D
= 5.0 A
27
ns
Rise Time
t
r
V
GS(on)
= 10 V
17
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
66
ns
Fall Time
t
f
24
ns
Total Gate Charge
Q
G
V
DD
= 450 V
34
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
8.2
nC
Gate to Drain Charge
Q
GD
I
D
= 10 A
12.3
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 10 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 10 A, V
GS
= 0 V
1.9
μ
s
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
μ
s
12
μ
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
≤
1 %
μ
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS
(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
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