參數(shù)資料
型號: 2SK3289
元件分類: 小信號晶體管
英文描述: 300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: CMPAK-3
文件頁數(shù): 2/4頁
文件大小: 89K
代理商: 2SK3289
2SK3289
2
Absolute Maximum Ratings (Ta = 25
°C)
Note:
1.PW
≤ 10 s, duty cycle ≤ 1%
2.Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25
°C)
Note:
3.Pulse test
4.Marking is AN
See characteristics curves of 2SK3287
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
300
mA
Drain peak current
ID(pulse)
Note1
1.2
A
Body-drain diode reverse drain current IDR
300
mA
Channel dissipation
Pch Note 2
300
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS 30
V
ID = 100 A, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS ±20
V
IG = ±100 A, VDS = 0
Gate to source leak current
IGSS
——
±5
AV
GS = ±16 V, VDS = 0
Zero gate voltege drain
current
IDSS
——
1
AV
DS = 30 V, VGS = 0
Gate to source cutoff voltage VGS(off)
1.3
2.3
V
ID = 10A, VDS = 5 V
Static drain to source on state
resistance
RDS(on)
—1.26
3.44
ID = 150 mA,VGS = 10 V
Note 3
RDS(on)
—2.8
3.44
ID = 50 mA,VGS = 4 V
Note
3
Forward transfer admittance
|yfs|
145
220
mS
ID = 150 mA, VDS =10 V
Note 3
Input capacitance
Ciss
6
pF
VDS = 10 V
Output capacitance
Coss
18
pF
VGS = 0
Reverse transfer capacitance Crss
2
pF
f = 1 MHz
Turn-on delay time
td(on)
—200
—ns
ID = 150 mA, VGS = 10 V
Rise time
tr
—600
—ns
RL = 66.6
Turn-off delay time
td(off)
—1100
ns
Fall time
tf
—1100
ns
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