參數(shù)資料
型號: 2SK3287
元件分類: 小信號晶體管
英文描述: SMALL SIGNAL, FET
封裝: MPAK-3
文件頁數(shù): 4/8頁
文件大?。?/td> 40K
代理商: 2SK3287
2SK3287
4
1.0
0.8
0.6
0.4
0.2
0
24
6
810
5
4
3
2
1
–40
0
40
80
120
160
0
I
= 300mA
D
150m A
Pulse Test
I
= 150m A
D
V
= 4 V
GS
10 V
0.1
0.2
0.5
1.0
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
0.1
0.5
0.2
50
20
10
2
5
1.0
0.5
1.0
V
= 4V
GS
10 V
Pulse Test
Drain Current
I
(A)
D
Static
Drain
to
Source
on
State
Resistance
(
)
DS(on)
Static Drain to Source on State
Resistance vs. Drain Current
Case Temperature
Tc
(
°C)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current I
(A)
D
Forwaed Transfer Admittance
vs. Drain Current
|yfs|
(S)
Forward
Transfer
Admittance
50m A
50mA
50mA,150mA, 300m A
5
2
1.0
0.2
0.5
0.1
0.05
V
= 10 V
Pulse Test
DS
Tc = –25
°C
25
°C
75
°C
R
Static
Drain
to
Source
on
State
Resistance
(
)
DS(on)
R
相關PDF資料
PDF描述
2SK3288 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK3291 1.6 A, 60 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3292 2 A, 60 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3294-AZ 20 A, 250 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3295-S 35 A, 20 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
相關代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3287AN(TL) 制造商:Renesas Electronics 功能描述:Cut Tape
2SK3288 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Switching
2SK3288ENTL 功能描述:MOSFET N-CH 30V .1A MPAK RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
2SK3289 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Switching
2SK3289AN(TL-E) 制造商:Renesas Electronics 功能描述:Cut Tape