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參數(shù)資料
| 型號： | 2SK3239L-E |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-63, DPAK-3 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 102K |
| 代理商： | 2SK3239L-E |
2SK2329(L), 2SK2329(S)
Rev.2.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Drain Current
40
30
20
10
0
50
100
150
200
100
20
50
10
2
5
1
0.2
0.5
0.1
0.5
1
2
5
10
20
50
1 ms
PW
=
10
ms
(1shot)
DC
Operation
(Tc
=
25
°C)
100
s
10
s
Operation in
this area is
limited by RDS(on)
Ta = 25
°C
20
16
12
8
4
0
24
6
8
10
VGS = 1.5 V
2 V
10 V
5 V
4 V
2.5 V
20
16
12
8
4
0
12
3
4
5
VDS = 10 V
Pulse Test
Tc = 75
°C
25
°C
–25
°C
1.0
0.8
0.6
0.4
0.2
0
24
6
8
10
Pulse Test
ID = 10 A
2 A
5 A
0.1 0.2
0.5
1
2
5
10 20
50 100
VGS = 2.5 V
4 V
Pulse Test
1
0.2
0.5
0.1
0.02
0.05
0.01
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK3239STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK324 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SK324 |
| 2SK325 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 10A I(D) | TO-3 |
| 2SK3262 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOS-FET |
| 2SK3262-01MR | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 85 Milliohms;ID +/-20A;TO-220F15;PD 45W |
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