參數(shù)資料
型號(hào)： 2SK3235
元件分類： JFETs
英文描述： 15 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3P, 3 PIN
文件頁(yè)數(shù)： 4/10頁(yè)
文件大小： 46K
代理商： 2SK3235
2SK3235
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
—
V
I
D = 10 mA, VGS = 0
Gate to source leak current
I
GSS
——
±0.1
AV
GS = ±30 V, VDS = 0
Zero gate voltage drain current
I
DSS
——
1
AV
DS = 500 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
3.0
—
4.0
V
DS = 10 V, ID = 1 mA
Static drain to source on state
resistance
R
DS(on)
—
0.3
0.4
I
D = 7.5 A, VGS = 10 V
Note4
Forward transfer admittance
|y
fs|
8.5
14
—
S
I
D = 7.5 A, VDS = 10 V
Note4
Input capacitance
Ciss
—
1920
—
pF
V
DS = 25 V
Output capacitance
Coss
—
220
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
30
—
pF
f = 1 MHz
Turn-on delay time
td(on)
—
35
—
ns
I
D = 7.5 A
Rise time
tr
—
30
—
ns
V
GS = 10 V
Turn-off delay time
td(off)
—
120
—
ns
R
L = 33.3
Fall time
tf
—
50
—
ns
Rg = 10
Total gate charge
Qg
—
48
—
nC
V
DD = 400 V
Gate to source charge
Qgs
—
10
—
nC
V
GS = 10 V
Gate to drain charge
Qgd
—
24
—
nC
I
D = 15 A
Body-drain diode forward
voltage
V
DF
—
0.85
1.3
V
I
F = 15 A, VGS = 0
Body-drain diode reverse
recovery time
trr
—
500
—
ns
I
F = 15 A, VGS = 0
Body-drain diode reverse
recovery charge
Qrr
—
20
—
C
diF/dt = 100 A/
s
Note:
4. Pulse test
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