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參數(shù)資料
| 型號： | 2SK3230J3 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | TUSM, SC-89, 3 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大小： | 174K |
| 代理商： | 2SK3230J3 |
2SK2412
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
SWITCHING CHARACTERISTICS
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0
1.0
2.0
3.0
–50
Tch - Channel Temperature - C
20
40
60
100
–25
0
25
50
75
125
150
100
10
VDS - Drain to Source Voltage - V
10
100
1000
10000
VSD - Source to Drain Voltage - V
ID - Drain Current - A
1000
100
10
1.0
0.1
1.0
10
100
ID - Drain Current - A
Qg - Gate Charge - nC
10
0.1
1.0
10
100
010
20
30
40
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
16
R
DS
(on)
-
Drain
to
Source
On-State
Resistance
-
m
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
trr
-
Reverse
Recovery
Diode
-
ns
td
(on)
,tr,
t
d
(off)
,t
f-
Switching
Time
-
ns
V
DS
-
Drain
to
Source
Voltage
-
V
ISD
-
Diode
Forward
Current
-
A
80
120
140
0
0.1
ID = 10 A
di/dt = 50 A/ s
VGS = 0
1
Pulsed
VGS = 4 V
VGS = 10 V
Crss
Coss
Ciss
VGS = 0
f = 1 MHz
tr
tf
td (on)
td (off)
VDD = 30 V
VGS = 10 V
RG = 10
V
GS
-
Gate
to
Source
Voltage
-
V
VDS
VGS
VDD = 48 V
ID = 20 A
10 V
VGS = 0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3230J5 | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3235-E | 15 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3235 | 15 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3289 | 300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3289 | 300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3233 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3233(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3234 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:2SK3234 |
| 2SK3234(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3235 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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