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參數(shù)資料
| 型號： | 2SK3230J2 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | TUSM, SC-89, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 174K |
| 代理商： | 2SK3230J2 |
2SK2412
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
1
0.1
0.01
10
100
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
rth
(t)
-
Transient
Thermal
Resistance
-
C/w
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
10
1
0
10
100
ID - Drain Current - A
120
100
80
60
40
20
0
5
10
15
20
VGS - Gate to Source Voltage - V
2.0
–50
1.5
1.0
0.5
0
50
100
150
Tch - Channel Temperature - C
120
1
ID - Drain Current - A
100
60
40
20
0
10
100
R
DS
(on)
-
Drain
to
Source
On-State
Resistance
-
m
|y
fs
|-
Forward
Transfer
Admittance
-
S
R
DS
(on)
-
Drain
to
Source
On-State
Resistance
-
m
V
GS
(off)
-
Gate
to
Source
Cutoff
Voltage
-
V
80
1
–25
25
75
125
Single Pulse
TA = –25 C
25 C
75 C
125 C
VDS = 10 V
Pulsed
ID = 10 A
Pulsed
VDS = 10 V
ID = 1 mA
VGS = 4 V
Pulsed
VGS = 10 V
Rth (ch-c) = 4.17 C/W
Rth (ch-a) = 62.5 C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3230J3 | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3230J5 | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3235-E | 15 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3235 | 15 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3289 | 300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3233 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3233(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3234 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:2SK3234 |
| 2SK3234(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3235 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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