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參數(shù)資料
| 型號(hào)： | 2SK3214-E |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 200 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 1006K |
| 代理商： | 2SK3214-E |
2SK3879
2011-04-25
5
0.001
0.01
0.1
1
10
0.00001 0.0001
0.001
0.01
0.1
1
10
0.1
0.05
0.02
0.01
SINGLE PULSE
Ｐ
ＤＭ
t
Ｔ
Ｄｕｔｙ=t/Ｔ
Ｒｔｈ（ｃｈ－ｃ）=1.56℃
duty=0.5
0.01
0.1
1
10
100
1
10
100
1000
１ｍｓ＊
ＶＤＳＳ ＭＡＸ．
１００μｓ＊
ＩＤ ＭＡＸ(ＰＵＬＳＥＤ)＊
ＩＤ ＭＡＸ(ＣＯＮＴＩＮＵＯＵＳ)
ＤＣ ＯＰＥＲＡＴＩＯＮ
Ｔｃ＝２５℃
＊ SINGLE NONREPETITIVE
PULSE Tc=25℃
Curves must be detaed
lineality with increase in
temperature.
0
50
100
150
200
250
300
350
400
25
50
75
100
125
150
PULSE WIDTH tw (s)
rth tw
EAS – Tch
CHANNEL TEMPERATURE (INITIAL) Tch (°C)
NO
RMAL
IZED
TRANS
IE
N
T
H
E
R
MAL
IM
PE
DAN
C
E
r th
(t)
/R
th
(ch-c)
A
V
ALANCHE
E
N
E
R
GY
E
AS
(mJ)
15 V
TEST CIRCUIT
WAVE FORM
IAR
BVDSS
VDD
VDS
RG = 25 Ω
VDD = 90 V, L = 16.1 mH
=
VDD
BVDSS
2
I
L
2
1
ΕAS
SAFE OPERATING AREA
DRAIN
SOURCE VOLTAGE VDS (V)
DR
AIN
CURR
EN
T
I D
(A)
* SINGLE NONREPETITIVE PULSE
Tc = 25
°C
Curves must be derated linearly with
increase in temperature
ID MAX (PULSED) *
ID MAX (CONTINUOUS)
100
μs *
1 ms*
DC OPERATION
Tc = 25
°
Duty
= t/T
Rth (ch-c) = 1.56°C/W
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|---|---|
| 2SK3215 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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| 2SK3216-01 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOS-FET |
| 2SK3216-01SC | 制造商:Fuji Electric 功能描述: |
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