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參數資料
| 型號： | 2SK3211L-E |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁數： | 4/6頁 |
| 文件大?。?/td> | 94K |
| 代理商： | 2SK3211L-E |
2SA1350
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–40
V
Collector to emitter voltage
V
CEO
–30
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–100
mA
Collector power dissipation
P
C
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–40
—
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–30
—
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
—
–0.5
AV
CB = –18 V, IE = 0
Emitter cutoff current
I
EBO
—
–0.5
AV
EB = –2 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
500
V
CE = –12 V, IC = –2 mA
Base to emitter voltage
V
BE
—
–0.75
V
CE = –12 V, IC = –2 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.2
V
I
C = –10 mA, IB = –1 mA
Gain bandwidth product
f
T
—
200
—
MHz
V
CE = –12 V, IC = –2 mA
Collector output capacitance
Cob
—
4.5
pF
V
CB = –10 V, IE = 0, f = 1 MHz
Noise figure
NF
—
1.0
5.0
dB
V
CE = –6 V, IC = –0.1 mA
R
g = 1 k, f = 1 kHz
Note:
1. The 2SA1350 is grouped by h
FE as follows.
BC
D
100 to 200
160 to 320
250 to 500
See characteristic curves of 2SA1031.
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| 2SK3225-Z | 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3211S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3211STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3212 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3212-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3214 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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