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參數(shù)資料
| 型號(hào)： | 2SK3210STL |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 157K |
| 代理商： | 2SK3210STL |
2SK3210(L), 2SK3210(S)
Rev.3.00 Sep. 30, 2004 page 2 of 8
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
150
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
——
±10
AVGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
——
10
AVDS = 150 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
VDS = 10 V, ID = 1 mA
RDS(on)
—40
45
m
ID = 15 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
—45
63
m
ID = 15 A, VGS = 4 V
Note4
Forward transfer admittance
|yfs|18
30
—
S
ID = 15 A, VDS = 10 V
Note4
Input capacitance
Ciss
—
2600
—
pF
Coss
—
820
—
pF
Reverse transfer capacitance
Crss
—
350
—
pF
VDS = 10 V, VGS = 0
f = 1MHz
Turn-on delay time
td(on)
—25—
ns
Rise time
tr
—
180
—
ns
Turn-off delay time
td(off)
—
600
—
ns
Fall time
tf
—
280
—
ns
VGS = 10 V, ID= 15 A
RL = 2
Body–drain diode forward voltage
VDF
—0.91—
V
IF = 30 A, VGS = 0
Body–drain diode reverse recovery
time
trr
—
110
—
ns
IF = 30 A, VGS = 0
diF/dt = 50 A/
s
Notes: 4. Pulse test
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| 2SK3211 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3211(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-262VAR |
| 2SK3211(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-263AA |
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