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參數(shù)資料
| 型號： | 2SK3205(2-7B3B) |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 150 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7B3B, SC-64, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 196K |
| 代理商： | 2SK3205(2-7B3B) |
2SK3205
2006-11-20
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
πMOSV)
2SK3205
Switching Regulator Applications DCDC Converter, and
Motor Drive Applications
4 V gate drive
Low drainsource ON resistance
: RDS (ON) = 0.36 (typ.)
High forward transfer admittance
: |Yfs| = 4.5 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 150 V)
Enhancementmode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
150
V
Draingate voltage (RGS = 20 k)
VDGR
150
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
5
Drain current
Pulse (Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
71
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
125
°C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.2 mH, IAR = 5 A, RG = 25
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
—
JEITA
SC-64
TOSHIBA
2-7B3B
Weight: 0.36 g (typ.)
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相關代理商/技術參數(shù) |
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| 2SK3210 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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