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參數(shù)資料
| 型號： | 2SK3176 |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 200 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-16C1B, SC-65, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 161K |
| 代理商： | 2SK3176 |
2SK3176
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π-MOS V)
2SK3176
Switching Regulator, DC-DC Converter and Motor Drive
Applications
Low drain-source ON resistance: RDS (ON) = 38 m (typ.)
High forward transfer admittance: |Yfs| = 30 S (typ.)
Low leakage current: IDSS = 100 mA (max) (VDS = 200 V)
Enhancement-mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
200
V
Gate-source voltage
VGSS
±20
V
DC (Note 1)
ID
30
Drain current
Pulse (Note 1)
IDP
120
A
Drain power dissipation
(Tc
= 25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
925
mJ
Avalanche current
IAR
30
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Please use devices on condition that the channel temperature is below 150
°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.66 mH, RG = 25 Ω, IAR = 30 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature.
Note 4: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device.
Please handle with caution.
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
0.833
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50.0
°C/W
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3176(F) | 功能描述:MOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3176_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications |
| 2SK3176_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator, DC-DC Converter and Motor Drive Applications |
| 2SK3177 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3177-E | 制造商:Renesas Electronics Corporation 功能描述: |
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