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參數(shù)資料
| 型號(hào)： | 2SK3160 |
| 元件分類： | JFETs |
| 英文描述： | 0.19 ohm, POWER, FET |
| 封裝： | TO-220FM, 3 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2SK3160 |
2SK3160
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
200
—
V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 200 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D = 1mA, VDS = 10V
Static drain to source on state R
DS(on)
—
130
170
m
I
D = 5A, VGS = 10V
Note4
resistance
R
DS(on)
—
150
190
m
I
D = 5A, VGS = 4V
Note4
Forward transfer admittance
|y
fs|
8
13
—
S
I
D = 5A, VDS = 10V
Note4
Input capacitance
Ciss
—
1100
—
pF
V
DS = 10V
Output capacitance
Coss
—
300
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
150
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
15
—
ns
I
D = 5A, VGS = 10V
Rise time
t
r
—
75
—
ns
R
L = 6
Turn-off delay time
t
d(off)
—
280
—
ns
Fall time
t
f
—
110
—
ns
Body–drain diode forward
voltage
V
DF
—
0.85
—
V
I
F = 10A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
100
—
ns
I
F = 10A, VGS = 0
diF/ dt =50A/
s
Note:
4. Pulse test
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PDF描述 |
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| 2SK3161(L) | 15 A, 200 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3161(S) | 15 A, 200 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3161 | 0.16 ohm, POWER, FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3160-E | 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,200V,10A,0.13ohm,TO-220FM |
| 2SK3161 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3161(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-263AB |
| 2SK3161-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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