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參數(shù)資料
| 型號(hào)： | 2SK3159 |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大小： | 44K |
| 代理商： | 2SK3159 |
2SK3159
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
150
—
V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 150 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D = 1mA, VDS = 10V
Static drain to source on state R
DS(on)
—2330m
I
D = 25A, VGS = 10V
Note4
resistance
R
DS(on)
—2842m
I
D = 25A, VGS = 4V
Note4
Forward transfer admittance
|y
fs|27
45
—
S
I
D = 25A, VDS = 10V
Note4
Input capacitance
Ciss
—
4000
—
pF
V
DS = 10V
Output capacitance
Coss
—
1650
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
590
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
30
—
ns
I
D = 25A, VGS = 10V
Rise time
t
r
—
280
—
ns
R
L = 1.2
Turn-off delay time
t
d(off)
—
830
—
ns
Fall time
t
f
—
450
—
ns
Body–drain diode forward
voltage
V
DF
—
0.95
—
V
I
F = 50A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
200
—
ns
I
F = 50A, VGS = 0
diF/ dt =50A/
s
Note:
4. Pulse test
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| 2SK3160 | 10 A, 200 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3159(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3159-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK315E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 2.5MA I(DSS) | SPAK |
| 2SK315F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | SPAK |
| 2SK315G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 10MA I(DSS) | SPAK |
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