- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33495 > 2SK3158-E 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | 2SK3158-E |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-46, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 2SK3158-E |
2SK3158
Rev.4.00 Sep 07, 2005 page 2 of 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
150
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
30
A
Drain peak current
ID(pulse)
Note1
120
A
Body-drain diode reverse drain current
IDR
30
A
Avalanche current
IAP
Note 3
30
A
Avalanche energy
EAR
Note 3
67
mJ
Channel dissipation
Pch
Note 2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
150
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 150 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
ID = 1 mA, VDS = 10V
RDS(on)
—
40
45
m
ID = 15 A, VGS = 10V
Note 4
Static drain to source on state
resistance
RDS(on)
—
45
63
m
ID = 15 A, VGS = 4V
Note 4
Forward transfer admittance
|yfs|
18
30
—
S
ID = 15 A, VDS = 10V
Note 4
Input capacitance
Ciss
—
2600
—
pF
Output capacitance
Coss
—
820
—
pF
Reverse transfer capacitance
Crss
—
350
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
25
—
ns
Rise time
tr
—
180
—
ns
Turn-off delay time
td(off)
—
600
—
ns
Fall time
tf
—
280
—
ns
ID = 15 A, VGS = 10 V,
RL = 2
Body–drain diode forward voltage
VDF
—
0.91
—
V
IF = 30 A, VGS = 0
Body–drain diode reverse recovery
time
trr
—
110
—
ns
IF = 30 A, VGS = 0
diF/ dt = 50 A/
s
Note:
4. Pulse test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3159 | 0.042 ohm, POWER, FET |
| 2SK3159 | 50 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK315G | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 2SK315E | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 2SK315 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3159 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3159(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3159-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK315E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 2.5MA I(DSS) | SPAK |
| 2SK315F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | SPAK |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。