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參數資料
| 型號： | 2SK3152-E |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 120 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220FM, 3 PIN |
| 文件頁數： | 8/12頁 |
| 文件大?。?/td> | 68K |
| 代理商： | 2SK3152-E |
2SK3152
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
120
—
V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 120 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D = 1mA, VDS = 10V
Static drain to source on state R
DS(on)
—
100
130
m
I
D = 5A, VGS = 10V
Note4
resistance
R
DS(on)
—
130
170
m
I
D = 5A, VGS = 4V
Note4
Forward transfer admittance
|y
fs|
5.5
9.5
—
S
I
D = 5A, VDS = 10V
Note4
Input capacitance
Ciss
—
580
—
pF
V
DS = 10V
Output capacitance
Coss
—
240
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
130
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
11
—
ns
I
D = 5A, VGS = 10V
Rise time
t
r
—
55
—
ns
R
L = 6
Turn-off delay time
t
d(off)
—
140
—
ns
Fall time
t
f
—80—
ns
Body–drain diode forward
voltage
V
DF
—
0.9
—
V
I
F = 10A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
100
—
V
I
F = 10A, VGS = 0
diF/ dt =50A/
s
Note:
4. Pulse test
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相關代理商/技術參數 |
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| 2SK3153 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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| 2SK3154 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3154-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3155 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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