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參數(shù)資料
| 型號(hào)： | 2SK3152-E |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 120 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220FM, 3 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 68K |
| 代理商： | 2SK3152-E |
2SK3152
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
120
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
10
A
Drain peak current
I
D(pulse)
Note1
40
A
Body-drain diode reverse drain current
I
DR
10
A
Avalanche current
I
AP
Note3
10
A
Avalanche energy
E
AR
Note3
8.5
mJ
Channel dissipation
Pch
Note2
25
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3152-E | 10 A, 120 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3161L-E | 15 A, 200 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3161L-E | 15 A, 200 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3161S | 15 A, 200 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3163-E | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3153 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3153-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3154 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3154-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3155 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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