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參數(shù)資料
| 型號： | 2SK3150L |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大小： | 79K |
| 代理商： | 2SK3150L |
2SK3150(L),2SK3150(S)
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
100
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
20
A
Drain peak current
I
D(pulse)
Note1
80
A
Body-drain diode reverse drain current
I
DR
20
A
Avalanche current
I
AP
Note3
20
A
Avalanche energy
E
AR
Note3
40
mJ
Channel dissipation
Pch
Note2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3150S | 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3153-E | 15 A, 120 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3153-E | 15 A, 120 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3153 | 15 A, 120 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3155 | 15 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3150L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3150S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3150S-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 20A 3-Pin(2+Tab) LDPAK(S)-(1) |
| 2SK3150STL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 20A 3-Pin(2+Tab) LDPAK(S)-(1) T/R Cut Tape |
| 2SK3151 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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