- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄33495 > 2SK3150L-E 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3150L-E |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 95K |
| 代理商： | 2SK3150L-E |
2SK3150(L), 2SK3150(S)
Rev.4.00 Sep 07, 2005 page 2 of 8
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
20
A
Drain peak current
ID(pulse)
Note1
80
A
Body-drain diode reverse drain current
IDR
20
A
Avalanche current
IAP
Note3
20
A
Avalanche energy
EAR
Note3
40
mJ
Channel dissipation
Pch
Note2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
100
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 100 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
ID = 1 mA, VDS = 10 V
RDS(on)
—
45
60
m
ID = 10 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
—
65
85
m
ID = 10 A, VGS = 4 V
Note4
Forward transfer admittance
|yfs|
8.5
14
—
S
ID = 10 A, VDS = 10 V
Note4
Input capacitance
Ciss
—
900
—
pF
Output capacitance
Coss
—
400
—
pF
Reverse transfer capacitance
Crss
—
210
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
15
—
ns
Rise time
tr
—
120
—
ns
Turn-off delay time
td(off)
—
200
—
ns
Fall time
tf
—
150
—
ns
ID = 10 A, VGS = 10 V,
RL = 3
Body–drain diode forward voltage
VDF
—
0.9
—
V
IF = 20 A, VGS = 0
Body–drain diode reverse recovery
time
trr
—
90
—
ns
IF = 20 A, VGS = 0
diF/ dt = 50 A/
s
Note:
4. Pulse test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3150L | 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3150L | 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3150S | 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3153-E | 15 A, 120 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3153-E | 15 A, 120 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3150S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3150S-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 20A 3-Pin(2+Tab) LDPAK(S)-(1) |
| 2SK3150STL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 20A 3-Pin(2+Tab) LDPAK(S)-(1) T/R Cut Tape |
| 2SK3151 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3151(E) | 制造商:Renesas Electronics Corporation 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。