參數(shù)資料
型號(hào): 2SK3149
元件分類: JFETs
英文描述: 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 8/12頁
文件大?。?/td> 68K
代理商: 2SK3149
2SK3149
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
±10
AV
GS = ±16V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 100 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
2.5
V
I
D = 1mA, VDS = 10V
Static drain to source on state R
DS(on)
—4560m
I
D = 10A, VGS = 10V
Note4
resistance
R
DS(on)
—6585m
I
D = 10A, VGS = 4V
Note4
Forward transfer admittance
|y
fs|
8.5
14
S
I
D = 10A, VDS = 10V
Note4
Input capacitance
Ciss
900
pF
V
DS = 10V
Output capacitance
Coss
400
pF
V
GS = 0
Reverse transfer capacitance Crss
210
pF
f = 1MHz
Turn-on delay time
t
d(on)
15
ns
I
D = 10A, VGS = 10V
Rise time
t
r
120
ns
R
L = 3
Turn-off delay time
t
d(off)
200
ns
Fall time
t
f
150
ns
Body–drain diode forward
voltage
V
DF
0.9
V
I
F = 20A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
90
ns
I
F = 20A, VGS = 0
diF/ dt =50A/s
Note:
4. Pulse test
相關(guān)PDF資料
PDF描述
2SK3150(L) 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3150(L) 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3150(S) 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3150(L) 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3151-E 50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
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