參數(shù)資料
型號: 2SK3148
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET(N溝道MOSFET)
中文描述: 硅?通道場效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 2/9頁
文件大?。?/td> 142K
代理商: 2SK3148
2SK3148
2
Note: 1. PW
10
μ
s, duty cycle
1%
2. Value at Tc = 25
°
C
Value at Tch = 25
°
C, Rg
50
Electrical Characteristics (Ta = 25
°
C)
Note: 4. Pulse test
Channel dissipation
Channel temperature
Storage temperature
Pch
Note2
Tch
Tstg
30
150
–55 to +150
W
°
C
°
C
Item
Drain to source breakdown voltage V
(BR)DSS
100
Gate to source breakdown voltage V
(BR)GSS
±
20
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Symbol
Min
Typ
45
65
15
840
350
180
15
120
200
150
0.9
90
Max
±
10
10
2.5
60
85
Unit
V
V
μ
A
μ
A
V
m
m
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 100 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 10 A, V
GS
= 10 V
Note4
I
D
= 10 A, V
GS
= 4 V
Note4
I
D
= 10 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 10 A, V
GS
= 10 V
R
L
= 3
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
1.0
9
I
F
= 20 A, V
GS
= 0
I
F
= 20 A, V
GS
= 0
diF/ dt = 50 A/
μ
s
Item
Symbol
Ratings
Unit
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