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參數(shù)資料
| 型號： | 2SK3147(L) |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 2SK3147(L) |
2SK3147(L),2SK3147(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
—
V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 100 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D = 1mA, VDS = 10V
Static drain to source on state R
DS(on)
—
0.1
0.13
I
D = 3A, VGS = 10V
Note4
resistance
R
DS(on)
—
0.13
0.18
I
D = 3A, VGS = 4V
Note4
Forward transfer admittance
|y
fs|
3.5
6
—
S
I
D = 3A, VDS = 10V
Note4
Input capacitance
Ciss
—
420
—
pF
V
DS = 10V
Output capacitance
Coss
—
185
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
100
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
10
—
ns
I
D = 3A, VGS = 10V
Rise time
t
r
—
35
—
ns
R
L = 10
Turn-off delay time
t
d(off)
—
110
—
ns
Fall time
t
f
—60—
ns
Body–drain diode forward
voltage
V
DF
—
0.85
—
V
I
F = 5A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
85
—
ns
I
F = 5A, VGS = 0
diF/ dt =50A/
s
Note:
4. Pulse test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3147(S) | 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3149-E | 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3150L-E | 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3150L | 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3150L | 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3147-L(E) | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 5A 3-Pin(3+Tab) DPAK(L)-(2) |
| 2SK3147L-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:N-channel MOSFET, 100V,5A,0.1ohm,DPAK-L |
| 2SK3147S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3147S-E | 制造商:Renesas Electronics Corporation 功能描述:Bulk 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 5A 3-Pin(2+Tab) DPAK |
| 2SK3147STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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