參數(shù)資料
型號(hào): 2SK3142
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 6/10頁
文件大?。?/td> 50K
代理商: 2SK3142
2SK3142
6
0.1
0.3
1
3
10
30
100
0
10
20
30
40
50
1000
10000
3000
50
40
30
20
10
0
20
16
12
8
4
80
160
240
320
400
0
1000
100
200
20
10
0.1 0.2
2
10
100
1000
500
100
200
20
50
10
di / dt = 50 A / μs
V = 0, Ta = 25°C
300
20
1
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
100
V = 0
f = 1 MHz
Ciss
Coss
Crss
I = 60 A
V
GS
V
DS
V = 20 V
10 V
5 V
0.5
5
V = 20 V
10 V
5 V
500
50
50
V = 10 V, V = 10 V
PW = 5 μs, duty < 1%
r
d(on)
t
d(off)
t
tf
30000
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3142-01(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK3142-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3147 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3147(L) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-251