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參數(shù)資料
| 型號： | 2SK3140 |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 65K |
| 代理商： | 2SK3140 |
2SK3140
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
——V
I
D = 10 mA, VGS = 0
Gate to source leak current
I
GSS
—
±0.1
AV
GS = ±20 V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 60 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D = 1 mA, VDS = 10 V
Note 1
Static drain to source on state R
DS(on)
—
6.0
7.5
m
I
D = 30 A, VGS = 10 V
Note 1
resistance
—
8.0
12
m
I
D = 30 A, VGS = 4 V
Note 1
Forward transfer admittance
|y
fs|45
75
—
S
I
D = 30 A, VDS = 10 V
Note 1
Input capacitance
Ciss
—
7100
—
pF
V
DS = 10 V
Output capacitance
Coss
—
1000
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
280
—
pF
f = 1 MHz
Total gate charge
Qg
—
125
—
nc
V
DD = 25 V
Gate to source charge
Qgs
—
25
—
nc
V
GS = 10 V
Gate to drain charge
Qgd
—
25
—
nc
I
D = 60 A
Turn-on delay time
t
d(on)
—
60
—
ns
V
GS = 10 V, ID = 30 A
Rise time
t
r
—
250
—
ns
R
L = 1
Turn-off delay time
t
d(off)
—
540
—
ns
Fall time
t
f
—
320
—
ns
Body–drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 60 A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
80
—
ns
I
F = 60 A, VGS = 0
diF/ dt = 50 A/ s
Note:
1. Pulse test
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PDF描述 |
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| 2SK3149-E | 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| 2SK3149 | 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3150(L) | 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3140(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3141 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3141-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3142 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3142-01(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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