參數(shù)資料
型號(hào): 2SK3136
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET(N溝道MOSFET)
中文描述: 硅?通道場(chǎng)效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁(yè)數(shù): 3/10頁(yè)
文件大小: 143K
代理商: 2SK3136
2SK3136
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source leak current
40
±
0.1
10
V
μ
A
μ
A
V
m
m
S
I
D
= 10mA, V
GS
= 0
V
GS
=
±
20V, V
DS
= 0
V
DS
= 40 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
*
1
I
D
= 40A, V
GS
= 10V
*
1
I
D
= 40A, V
GS
= 4V
*
1
I
D
= 40A, V
DS
= 10V
*
1
V
DS
= 10V
V
GS
= 0
f = 1MHz
I
GSS
I
DSS
V
GS(off)
R
DS(on)
Zero gate voltege drain current
Gate to source cutoff voltage
1.0
2.5
4.5
5.8
Static drain to source on state
resistance
6.5
10
Forward transfer admittance
|y
fs
|
Ciss
50
80
Input capacitance
6800
pF
Output capacitance
Coss
1300
pF
Reverse transfer capacitance
Crss
380
pF
Total gate charge
Qg
130
nc
Gate to source charge
Qgs
25
nc
Gate to drain charge
Qgd
30
nc
V
DD
= 25V
V
GS
= 10V
I
D
= 75A
V
GS
= 10V, I
D
= 40A
R
L
= 0.75
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
60
ns
Rise time
300
ns
Turn-off delay time
550
ns
Fall time
400
ns
Body–drain diode forward voltage
1.05
V
I
F
= 75A, V
GS
= 0
I
= 75A, V
= 0
diF/ dt =50A/
μ
s
Body–drain diode reverse
recovery time
90
ns
Note:
1. Pulse test
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參數(shù)描述
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