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參數(shù)資料
| 型號(hào)： | 2SK3135L |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 152K |
| 代理商： | 2SK3135L |
2SK3135(L),2SK3135(S)
8
Package Dimensions
Unit: mm
Cautions
1.
Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copy-
right, trademark, or other intellectual property rights for information contained in this document. Hitachi
bears no responsibility for problems that may arise with third party’s rights, including intellectual property
rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have re-
ceived the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, con-
tact Hitachi’s sales office before using the product in an application that demands especially high quality
and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily
injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety
equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions
and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the
guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or fail-
ure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equip-
ment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due
to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
10.2 ± 0.3
(
8
1.27 ± 0.2
1.2 ± 0.2
0.86
2.54 ± 0.5
1
(
–0.1
3
+
–
0.76 ± 0.1
1
+
–
2.54 ± 0.5
4.44 ± 0.21.3 ± 0.2
2.59 ± 0.2
0.4 ± 0.1
1
10.2 ± 0.3
(
8
1.27 ± 0.2
2.54 ± 0.5
(
0.86
+0.2
1
+
–
2.54 ± 0.5
4.44 ± 0.2
1.3 ± 0.2
2.59 ± 0.2
0.4 ± 0.1
1.2 ± 0.2
(
0.1
+0.2
L type
S type
Hitachi Code
EIAJ
JEDEC
LDPAK
—
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3135S | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3136 | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3140 | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3141 | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3142 | Silicon N Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3135L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3135S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3135STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3136 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3136-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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