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參數(shù)資料
| 型號： | 2SK3134 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅?通道場效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 73K |
| 代理商： | 2SK3134 |
2SK3134(L), 2SK3134(S)
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source leak current
30
—
—
V
I
D
= 10 mA, V
GS
= 0
V
GS
=
±
20 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
Note 1
I
D
= 40 A, V
GS
= 10 V
Note 1
I
D
= 40 A, V
GS
= 4 V
Note 1
I
D
= 40 A, V
DS
= 10 V
Note 1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
GSS
I
DSS
V
GS(off)
R
DS(on)
—
—
±
0.1
μ
A
μ
A
Zero gate voltege drain current
—
—
10
Gate to source cutoff voltage
1.0
—
2.5
V
Static drain to source on state
—
4.0
5.0
m
m
resistance
—
5.5
8.5
Forward transfer admittance
|y
fs
|
Ciss
50
80
—
S
Input capacitance
—
6800
—
pF
Output capacitance
Coss
—
1550
—
pF
Reverse transfer capacitance
Crss
—
500
—
pF
Total gate charge
Qg
—
130
—
nc
V
DD
= 10 V
V
GS
= 10 V
I
D
= 75 A
V
GS
= 10 V, I
D
= 40 A
R
L
= 0.25
Gate to source charge
Qgs
—
16
—
nc
Gate to drain charge
Qgd
—
30
—
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
50
—
ns
Rise time
—
370
—
ns
Turn-off delay time
—
550
—
ns
Fall time
—
380
—
ns
Body–drain diode forward voltage
—
1.05
—
V
I
F
= 75 A, V
GS
= 0
I
F
= 75 A, V
GS
= 0
diF/ dt = 5 A/
μ
s
Body–drain diode reverse
recovery time
Note:
1. Pulse test
—
80
—
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3134L | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3134S | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3135 | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3135L | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3135S | Silicon N Channel MOS FET(N溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3134(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-262AA |
| 2SK3134(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-263AB |
| 2SK3134L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3134L-E | 制造商:Renesas Electronics Corporation 功能描述: |
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