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參數(shù)資料
| 型號(hào)： | 2SK3133L |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 30K |
| 代理商： | 2SK3133L |
2SK3133(L),2SK3133(S)
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
Note 1
I
DR
Pch
Note 2
30
V
Gate to source voltage
±
20
V
Drain current
50
A
Drain peak current
200
A
Body-drain diode reverse drain current
50
A
Channel dissipation
50
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25
°
C
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source leak current
30
—
—
V
I
D
= 10 mA, V
GS
= 0
V
GS
=
±
20 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
Note 1
I
D
= 25 A, V
GS
= 10 V
Note 1
I
D
= 25 A, V
GS
= 4 V
Note 1
I
D
= 25 A, V
DS
= 10 V
Note 1
V
DS
= 10V
V
GS
= 0
f = 1 MHz
I
GSS
I
DSS
V
GS(off)
R
DS(on)
—
—
±
0.1
μ
A
μ
A
Zero gate voltege drain current
—
—
10
Gate to source cutoff voltage
1.0
—
2.5
V
Static drain to source on state
—
7
10
m
m
resistance
—
12
18
Forward transfer admittance
|y
fs
|
Ciss
TBD
TBD
—
S
Input capacitance
—
TBD
—
pF
Output capacitance
Coss
—
TBD
—
pF
Reverse transfer capacitance
Crss
—
TBD
—
pF
Total gate charge
Qg
—
TBD
—
nc
V
DD
= 10 V
V
GS
= 10 V
I
D
= 50 A
V
GS
= 10 V, I
D
= 25 A
R
L
= 0.4
Gate to source charge
Qgs
—
TBD
—
nc
Gate to drain charge
Qgd
—
TBD
—
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
TBD
—
ns
Rise time
—
TBD
—
ns
Turn-off delay time
—
TBD
—
ns
Fall time
—
TBD
—
ns
Body–drain diode forward voltage
—
TBD
—
V
I
F
= 50 A, V
GS
= 0
I
= 50 A, V
= 0
diF/ dt = 50 A/
μ
s
Body–drain diode reverse
recovery time
Note:
1. Pulse test
—
TBD
—
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3133S | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3133 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3134 | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3134L | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3134S | Silicon N Channel MOS FET(N溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3133S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3134 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3134(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-262AA |
| 2SK3134(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-263AB |
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